1 item symbol ratings unit remarks drain-source voltage v ds 230 v dsx 230 continuous drain current i d 40 pulsed drain current i d(puls] 160 gate-source voltage v gs 30 maximum avalanche current i ar 40 non-repetitive e as 633.1 maximum avalanche energy repetitive e ar 27 maximum avalanche energy maximum drain-source dv/dt dv ds /dt 20 peak diode recovery dv/dt dv/dt 5 max. power dissipation p d 270 2.02 operating and storage t ch +150 temperature range t stg electrical characteristics (t c =25c unless otherwise specified) thermal characteristics 2sk3872-01l,s,sj fuji power mosfet maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =230v v gs =0v v ds =184v v gs =0v v gs =30v i d =20a v gs =10v i d =20a v ds =25v v cc =180v i d =20a v gs =10v r gs =10 ? min. typ. max. units v v a na m ? s pf nc v ns c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 0.463 75 c/w c/w symbol bv dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd v sd t rr q rr item drain-source breakdown voltage gate threshold voltage gate-source leakage current drain-source on-state resistance forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =75v v gs =0v f=1mh v cc =115v i d =40a v gs =10v i f =40a v gs =0v t ch =25c i f =40a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj mj kv/s kv/s w c c 230 3.0 5.0 25 250 100 58 76 12 24 1880 2820 230 345 12 18 28 42 8.4 12.6 56 84 69 42.0 63.0 18.0 27.0 12.0 18.0 1.10 1.50 230 2.5 -55 to +150 outline drawings (mm) www.fujielectric.co.jp/fdt/scd super f ap-g series n-channel silicon power mosfet equivalent circuit schematic 200406 v gs =-30v note *1 note *2 note *3 v ds 230v note *4 tc=25c ta=25c = < note *1:tch 150c,repetitive and non-repetitive note *2:startingtch=25c,i as =16a,l=4.09mh, v cc =48v,r g =50 ? e as limited by maximum channel temperature and avalanche current. see to the ?avalanche energy? graph note *3:repetitive rating:pulse width limited by maximum channel temperature. see to the ?transient thermal impedance? graph. note *4:i f -i d , -di/dt=50a/s,v cc bv dss ,tch 150c = < features high speed switching low on-resistance no secondary breakdown low driving power avalanche-proof applications switching regulators dc-dc converters ups (uninterruptible power supply) gate(g) source(s) drain(d) see to p4 = < = < = <
2 characteristics 2sk3872-01l,s,sj fuji power mosfet 0 25 50 75 100 125 150 0 100 200 300 400 allowable power dissipation pd=f(tc) pd [w] tc [ c] 0 4 8 12162024 0 10 20 30 40 50 60 70 80 90 100 7v 20v 10v 8v 6.5v vgs=5.5v id [a] vds [v] typical output characteristics id=f(vds):80 s pulse test,tch=25 c 012345678910 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 c 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance gfs=f(id):80 s pulse test,vds=25v,tch=25 c 0 1020304050607080 0.00 0.05 0.10 0.15 0.20 0.25 0.30 rds(on) [ ? ] id [a] typical drain-source on-state resistance rds(on)=f(id):80 s pulse test,tch=25 c 10v 20v 8v 7v 6.5v vgs=6v -50 -25 0 25 50 75 100 125 150 0.00 0.05 0.10 0.15 0.20 0.25 rds(on) [ ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=20a,vgs=10v
3 2sk3872-01l,s,sj fuji power mosfet -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250 a vgs(th) [v] tch [ c] 0 1020304050607080 0 2 4 6 8 10 12 14 16 18 20 qg [nc] typical gate charge characteristics vgs=f(qg):id=40a,tch=25 c vgs [v] 184v 115v vcc= 46v 10 -1 10 0 10 1 10 2 10 3 1p 10p 100p 1n 10n c [f] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode if=f(vsd):80 s pulse test,tch=25 c 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id t=f(id):vcc=180v,vgs=10v,rg=10 ? td(on) tr tf td(off) t [ns] id [a] 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 i as =16a i as =24a i as =40a eav [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(av)=f(starting tch):vcc=48v,i(av)<=40a
4 2sk3872-01l,s,sj fuji power mosfet http://www.fujielectric.co.jp/fdt/scd/ outline drawings (mm) type(s) type(sj) 1 2 3 1 2 3 type(l) 1 2 3 1 2 3 4 4 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 100ms 10ms 1ms 100 s 10 s safe operating area id=f(vds):single pulse,tc=25 c t= 1 s d.c. id [a] vds [v] 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=48v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [c/w] t [sec]
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